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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/24194
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dc.contributor.authorNegoro, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.contributor.authorSchmid, Fen
dc.contributor.authorPensl, Gen
dc.date.accessioned2006-12-25T02:30:09Z-
dc.date.available2006-12-25T02:30:09Z-
dc.date.issued2004-11-01-
dc.identifier.citationY. Negoro et al., J. Appl. Phys. 96, 4916-4922 (2004)-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/2433/24194-
dc.format.extent261262 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleElectrical activation of high-concentration aluminum implanted in 4H-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00693547-
dc.identifier.jtitleJournal of Applied Physicsen
dc.identifier.volume96-
dc.identifier.issue9-
dc.identifier.spage4916-
dc.identifier.epage4922-
dc.relation.doi10.1063/1.1796518-
dc.textversionpublisher-
dc.relation.urlhttp://link.aip.org/link/?jap/96/4916-
dcterms.accessRightsopen access-
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