Downloads: 623
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
ApplPhysLett_85_1716.pdf | 63.01 kB | Adobe PDF | View/Open |
Title: | Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing |
Authors: | Negoro, Y Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Matsunami, H |
Issue Date: | 6-Sep-2004 |
Publisher: | American Institute of Physics |
Citation: | Y. Negoro et al., Appl. Phys. Lett. 85, 1716-1718 (2004) |
Journal title: | Applied Physics Letters |
Volume: | 85 |
Issue: | 10 |
Start page: | 1716 |
End page: | 1718 |
Rights: | Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/24195 |
DOI(Published Version): | 10.1063/1.1790032 |
Link: | Web of Science |
Related Link: | http://link.aip.org/link/?apl/85/1716 |
Appears in Collections: | Journal Articles |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.