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Title: Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
Authors: Negoro, Y
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Issue Date: 6-Sep-2004
Publisher: American Institute of Physics
Citation: Y. Negoro et al., Appl. Phys. Lett. 85, 1716-1718 (2004)
Journal title: Applied Physics Letters
Volume: 85
Issue: 10
Start page: 1716
End page: 1718
Rights: Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/24195
DOI(Published Version): 10.1063/1.1790032
Link: Web of Science
Related Link: http://link.aip.org/link/?apl/85/1716
Appears in Collections:Journal Articles

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