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dc.contributor.authorOnojima, Nen
dc.contributor.authorSuda, Jen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2006-12-25T02:30:11Z-
dc.date.available2006-12-25T02:30:11Z-
dc.date.issued2003-12-22-
dc.identifier.citationN. Onojima et al., Appl. Phys. Lett. 83, 5208-5210 (2003)-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/24197-
dc.format.extent471342 bytes-
dc.format.mimetypeapplication/pdf-
dc.language.isoeng-
dc.publisherAmerican Institute of Physicsen
dc.rightsCopyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.title4H-polytype AlN grown on 4H-SiC(11(2)over-bar0) substrate by polytype replicationen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.ncidAA00543431-
dc.identifier.jtitleApplied Physics Lettersen
dc.identifier.volume83-
dc.identifier.issue25-
dc.identifier.spage5208-
dc.identifier.epage5210-
dc.relation.doi10.1063/1.1636533-
dc.textversionpublisher-
dc.relation.urlhttp://link.aip.org/link/?apl/83/5208-
dcterms.accessRightsopen access-
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