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| File | Description | Size | Format | |
|---|---|---|---|---|
| ApplPhysLett_81_4772.pdf | 61.68 kB | Adobe PDF | View/Open |
| Title: | Interface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8) |
| Authors: | Yano, H Hirao, T Kimoto, T    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Matsunami, H Shiomi, H |
| Issue Date: | 16-Dec-2002 |
| Publisher: | American Institute of Physics |
| Citation: | H. Yano et al., Appl. Phys. Lett. 81, 4772-4774 (2002) |
| Journal title: | Applied Physics Letters |
| Volume: | 81 |
| Issue: | 25 |
| Start page: | 4772 |
| End page: | 4774 |
| Rights: | Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/24199 |
| DOI(Published Version): | 10.1063/1.1529313 |
| Link: | Web of Science |
| Related Link: | http://link.aip.org/link/?apl/81/4772 |
| Appears in Collections: | Journal Articles |
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