Downloads: 526

Files in This Item:
File Description SizeFormat 
ApplPhysLett_80_1586.pdf38.3 kBAdobe PDFView/Open
Title: High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition
Authors: Fujihira, K
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Issue Date: 4-Mar-2002
Publisher: American Institute of Physics
Citation: K. Fujihira et al., Appl. Phys. Lett. 80, 1586 (2002)
Journal title: Applied Physics Letters
Volume: 80
Issue: 9
Start page: 1586
End page: 1588
Rights: Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/24203
DOI(Published Version): 10.1063/1.1456968
Link: Web of Science
Related Link: http://link.aip.org/link/?apl/80/1586
Appears in Collections:Journal Articles

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.