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Title: | High-purity and high-quality 4H-SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition |
Authors: | Fujihira, K Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Matsunami, H |
Issue Date: | 4-Mar-2002 |
Publisher: | American Institute of Physics |
Citation: | K. Fujihira et al., Appl. Phys. Lett. 80, 1586 (2002) |
Journal title: | Applied Physics Letters |
Volume: | 80 |
Issue: | 9 |
Start page: | 1586 |
End page: | 1588 |
Rights: | Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
URI: | http://hdl.handle.net/2433/24203 |
DOI(Published Version): | 10.1063/1.1456968 |
Link: | Web of Science |
Related Link: | http://link.aip.org/link/?apl/80/1586 |
Appears in Collections: | Journal Articles |
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