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Title: Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H-SiC (11(2)over-bar0)
Authors: Negoro, Y
Miyamoto, N
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Issue Date: 14-Jan-2002
Publisher: American Institute of Physics
Citation: Y. Negoro et al., Appl. Phys. Lett. 80
Journal title: Applied Physics Letters
Volume: 80
Issue: 2
Start page: 240
End page: 242
Rights: Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
URI: http://hdl.handle.net/2433/24204
DOI(Published Version): 10.1063/1.1432745
Link: Web of Science
Related Link: http://link.aip.org/link/?apl/80/240
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