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Title: Mode-selective phonon excitation in gallium nitride using mid-infrared free-electron laser
Authors: Kagaya, Muneyuki
Yoshida, Kyohei
Zen, Heishun  kyouindb  KAKEN_id  orcid (unconfirmed)
Hachiya, Kan  kyouindb  KAKEN_id
Sagawa, Takashi  kyouindb  KAKEN_id  orcid (unconfirmed)
Ohgaki, Hideaki  kyouindb  KAKEN_id  orcid (unconfirmed)
Author's alias: 加賀屋, 宗志
蜂谷, 寛
佐川, 尚
大垣, 英明
Issue Date: 13-Jan-2017
Publisher: Japan Society of Applied Physics
Journal title: Japanese Journal of Applied Physics
Volume: 56
Issue: 2
Thesis number: 0200701
Abstract: The single-phonon mode was selectively excited in a solid-state sample. A mid-infrared free-electron laser, which was tuned to the target phonon mode, was irradiated onto a crystal cooled to a cryogenic temperature, where modes other than the intended excitation were suppressed. An A 1(LO) vibrational mode excitation on GaN(0001) face was demonstrated. Anti-Stokes Raman scattering was used to observe the excited vibrational mode, and the appearance and disappearance of the scattering band at the target wavenumber were confirmed to correspond to on and off switching of the pump free-electron laser and were fixed to the sample vibrational mode. The sum-frequency generation signals of the pump and probe lasers overlapped the Raman signals and followed the wavenumber shift of the pump laser.
Rights: © 2017 The Japan Society of Applied Physics
This is an author-created, un-copyedited version of an article accepted for publication in 'Japanese Journal of Applied Physics'. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at
The full-text file will be made open to the public on 13 January 2018 in accordance with publisher's 'Terms and Conditions for Self-Archiving'.
This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
DOI(Published Version): 10.7567/JJAP.56.022701
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