Simple Fabrication of Silicon Nanowires by Zinc-Thermal Reduction of Silicon Tetrachloride at 773 K

Abstract

This paper reports a simple Si nanowire (SiNW) production process based on zinc-thermal reduction of SiCl₄ in a sealed Pyrex® tube at 773 K. SiNWs with a diameter of about 300 nm were produced without any catalysts. The SiNWs consisted mainly of an amorphous phase, but also including a minor microcrystalline component. The introduction of Au nanoparticles to the reaction tube wall facilitated crystallization and resulted in the growth of thinner SiNWs. The typical diameter of these SiNWs was 10–20 nm. The simple apparatus and low operating temperature of this new process are advantageous in producing SiNWs on both industrial and laboratory scales.