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Title: Strain-induced creation and switching of anion vacancy layers in perovskite oxynitrides
Authors: Yamamoto, Takafumi
Chikamatsu, Akira
Kitagawa, Shunsaku
Izumo, Nana
Yamashita, Shunsuke
Takatsu, Hiroshi  kyouindb  KAKEN_id
Ochi, Masayuki
Maruyama, Takahiro
Namba, Morito
Sun, Wenhao
Nakashima, Takahide
Takeiri, Fumitaka
Fujii, Kotaro
Yashima, Masatomo
Sugisawa, Yuki
Sano, Masahito
Hirose, Yasushi
Sekiba, Daiichiro
Brown, Craig M.
Honda, Takashi
Ikeda, Kazutaka
Otomo, Toshiya
Kuroki, Kazuhiko
Ishida, Kenji
Mori, Takao
Kimoto, Koji
Hasegawa, Tetsuya
Kageyama, Hiroshi
Author's alias: 山本, 隆文
近松, 彰
北川, 俊作
出雲, 菜々
山下, 俊介
高津, 浩
越智, 正之
丸山, 敬裕
難波, 杜人
中島, 崇秀
竹入, 史隆
藤井, 孝太郎
八島, 正知
杉澤, 悠紀
佐野, 真仁
廣瀬, 靖
関場, 大一郎
本田, 孝志
池田, 一貴
大友, 季哉
黒木, 和彦
石田, 憲二
森, 孝雄
木本, 浩司
長谷川, 哲也
陰山, 洋
Keywords: Electronic materials
Solid-state chemistry
Issue Date: 23-Nov-2020
Publisher: Springer Nature
Journal title: Nature Communications
Volume: 11
Thesis number: 5923
Abstract: Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, but the order pattern is still difficult to manipulate. Separately, lattice strain between thin film oxides and a substrate induces improved functions and novel states of matter, while little attention has been paid to changes in chemical composition. Here we combine these two aspects to achieve strain-induced creation and switching of anion-vacancy patterns in perovskite films. Epitaxial SrVO3 films are topochemically converted to anion-deficient oxynitrides by ammonia treatment, where the direction or periodicity of defect planes is altered depending on the substrate employed, unlike the known change in crystal orientation. First-principles calculations verified its biaxial strain effect. Like oxide heterostructures, the oxynitride has a superlattice of insulating and metallic blocks. Given the abundance of perovskite families, this study provides new opportunities to design superlattices by chemically modifying simple perovskite oxides with tunable anion-vacancy patterns through epitaxial lattice strain.
Description: Using strain to control oxynitride properties. 京都大学プレスリリース. 2020-12-01.
原子空孔の配列を制御する新手法の発見. 京都大学プレスリリース. 2020-12-02.
Rights: © The Author(s) 2020. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit
DOI(Published Version): 10.1038/s41467-020-19217-7
PubMed ID: 33230157
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