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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1882-0786_abdac3.pdf | 858.96 kB | Adobe PDF | 見る/開く |
| タイトル: | Increase in the infield critical current density of MgB₂ thin films by high-temperature post-annealing |
| 著者: | Kambe, Hiroto Kawayama, Iwao    https://orcid.org/0000-0002-9170-9378 (unconfirmed)Kitamura, Naoya Ichinose, Ataru Iwanaka, Takumu Kusunoki, Toshiaki Doi, Toshiya https://orcid.org/0000-0001-9189-289X (unconfirmed) |
| 著者名の別形: | 神部, 広翔 川山, 巌 土井, 俊哉 |
| 発行日: | Feb-2021 |
| 出版者: | IOP Publishing |
| 誌名: | Applied Physics Express |
| 巻: | 14 |
| 号: | 2 |
| 論文番号: | 025504 |
| 抄録: | We propose a novel fabrication technique based on the formation of a Nb protective layer on a MgB₂ hin film and high-temperature post-annealing to increase the critical current density (Jc) of MgB₂ films under an external magnetic field. Analyses of the crystal structure and the composition of the processed MgB₂ films confirmed the suppression of the evaporation and oxidation of Mg by high-temperature annealing above 550 °C. The MgB₂ film annealed at 650 °C exhibited a Jc of 1.62 MA cm⁻² under 5 T, which is the highest reported value for MgB₂ films, wires, and bulk samples to date. |
| 著作権等: | Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| URI: | http://hdl.handle.net/2433/261805 |
| DOI(出版社版): | 10.35848/1882-0786/abdac3 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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