Laser-induced fine structures on silicon exposed to THz-FEL

Abstract

We found the irradiation of focused linearly polarized terahertz (THz)-waves emitted from THz free-electron laser (THz-FEL) engraved fine periodic stripe structures on the surfaces of single-crystal Si wafers. The experiments were performed at several wavelengths ranging from 50 to 82 μm with a macro-pulse fluence up to 32 J/cm2. The engraved structures are considered equivalent to the laser-induced periodic surface structures (LIPSS) produced by the irradiation of a femtosecond (fs)-pulsed laser in the near-infrared (NIR) region. However, the minimum period of ∼1/25 of the wavelength in the present case of THz-FEL is surely much smaller than those reported so far by use of fs-lasers and no more explicable by the so far proposed mechanisms. The finer LIPSS confirmed by longer-wavelength laser excitation by means of THz-FEL motivates investigation into the universal mechanism of LIPSS formation, which has been under a hot debate for decades.