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タイトル: | Selective Transfer of Si Thin-Film Microchips by SiO₂ Terraces on Host Chips for Fluidic Self-Assembly |
著者: | Fujita, Yutaka Ishihara, Shoji Nakashima, Yuki Nishigaya, Kosuke Tanabe, Katsuaki ![]() ![]() ![]() |
著者名の別形: | 藤田, 裕 石原, 翔治 中島, 悠貴 西ヶ谷, 紘佑 田辺, 克明 |
キーワード: | semiconductor silicon thin film layer transfer self-assembly integration device interface fluid liquid |
発行日: | Mar-2021 |
出版者: | MDPI AG |
誌名: | Applied Mechanics |
巻: | 2 |
号: | 1 |
開始ページ: | 16 |
終了ページ: | 24 |
抄録: | Fluidic self-assembly is a versatile on-chip integration method. In this scheme, a large number of semiconductor microchips are spontaneously deposited onto a host chip. The host chip typically comprises a Si substrate with an array of pockets at the designated microchip placement sites. In this study, we installed an SiO₂ layer on the terrace region between the pockets of the host chip, to reduce the attraction with the Si microchips. By the SiO₂-topped terrace scheme, we demonstrated a significant enhancement in the deposition selectivity of the Si microchips to the pocket sites, relative to the case of the conventional Si-only host chip. We theoretically explained the deposition selectivity enhancement in terms of the van der Waals interaction. Furthermore, our quantitative analysis implicated a potential applicability of the commonly used interlayer dielectrics, such as HfO₂, silsesquioxanes, and allyl ethers, directly as the terrace component. |
著作権等: | © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license |
URI: | http://hdl.handle.net/2433/276339 |
DOI(出版社版): | 10.3390/applmech2010002 |
出現コレクション: | 学術雑誌掲載論文等 |

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