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タイトル: Selective Transfer of Si Thin-Film Microchips by SiO₂ Terraces on Host Chips for Fluidic Self-Assembly
著者: Fujita, Yutaka
Ishihara, Shoji
Nakashima, Yuki
Nishigaya, Kosuke
Tanabe, Katsuaki  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-0179-4872 (unconfirmed)
著者名の別形: 藤田, 裕
石原, 翔治
中島, 悠貴
西ヶ谷, 紘佑
田辺, 克明
キーワード: semiconductor
silicon
thin film
layer transfer
self-assembly
integration
device
interface
fluid
liquid
発行日: Mar-2021
出版者: MDPI AG
誌名: Applied Mechanics
巻: 2
号: 1
開始ページ: 16
終了ページ: 24
抄録: Fluidic self-assembly is a versatile on-chip integration method. In this scheme, a large number of semiconductor microchips are spontaneously deposited onto a host chip. The host chip typically comprises a Si substrate with an array of pockets at the designated microchip placement sites. In this study, we installed an SiO₂ layer on the terrace region between the pockets of the host chip, to reduce the attraction with the Si microchips. By the SiO₂-topped terrace scheme, we demonstrated a significant enhancement in the deposition selectivity of the Si microchips to the pocket sites, relative to the case of the conventional Si-only host chip. We theoretically explained the deposition selectivity enhancement in terms of the van der Waals interaction. Furthermore, our quantitative analysis implicated a potential applicability of the commonly used interlayer dielectrics, such as HfO₂, silsesquioxanes, and allyl ethers, directly as the terrace component.
著作権等: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license
URI: http://hdl.handle.net/2433/276339
DOI(出版社版): 10.3390/applmech2010002
出現コレクション:学術雑誌掲載論文等

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