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Title: Electrical Conductance at Directly Bonded Si/Si Interfaces in Dependence on Oxygen Concentration in Bonding Ambient
Authors: Inomata, Atsuhiro
Sano, Naoki
Tanabe, Katsuaki
Author's alias: 猪又, 敦裕
佐野, 直希
田辺, 克明
Issue Date: Aug-2022
Publisher: The Electrochemical Society
IOP Publishing Limited
Journal title: ECS Journal of Solid State Science and Technology
Volume: 11
Issue: 8
Thesis number: 084001
Abstract: Direct semiconductor wafer bonding is a versatile fabrication scheme for high-performance optoelectronic devices. In the present study, the influence of oxygen concentration in the bonding ambient on the electrical conductance at directly bonded Si/Si interfaces is experimentally investigated in relation to interfacial oxidation. The interfacial electrical conductivity is observed higher for lower oxygen concentration at each bonding temperature in the range of 200 °C–400 °C. Ohmic contact characteristics are found attainable in the bonded interfaces by proper choice of bonding conditions. To support the electrical conductance trend, an X-ray photoelectron spectroscopy analysis confirms the extent of interfacial oxidation to be higher for lower oxygen concentration and higher bonding temperature. In addition, solar cell fabrication and operation with a current path through the bonded interface are demonstrated by using the bonding method in a low oxygen concentration ambient. The energy conversion efficiency of the bonded cell is observed comparable to that of an unbonded reference, to thus verify the suitability of the bonding scheme for device applications.
Rights: This is the Accepted Manuscript version of an article accepted for publication in ECS Journal of Solid State Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://orcid.org/0000-0002-0179-4872.
The full-text file will be made open to the public on 29 July 2023 in accordance with publisher's 'Terms and Conditions for Self-Archiving'.
This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
URI: http://hdl.handle.net/2433/276355
DOI(Published Version): 10.1149/2162-8777/ac830f
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