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タイトル: Nanometer Order Separation Control of Large Working Area Nanogap Created by Cleavage of Single-Crystal Silicon Along {111} Planes Using a MEMS Device
著者: Shimofuri, Masaki
Banerjee, Amit
Hirotani, Jun
Hirai, Yoshikazu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0003-0835-7314 (unconfirmed)
Tsuchiya, Toshiyuki  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-7846-5831 (unconfirmed)
著者名の別形: 霜降, 真希
廣谷, 潤
平井, 義和
土屋, 智由
キーワード: Nanogap
Casimir force
Van der Waals force
Lifshitz force
thermophotovoltaic energy conversion (TPV)
thermionic energy conversion (TIC)
thermal nanotechnology
発行日: Feb-2023
出版者: Institute of Electrical and Electronics Engineers (IEEE)
誌名: Journal of Microelectromechanical Systems
巻: 32
号: 1
開始ページ: 67
終了ページ: 73
抄録: Nanogaps with a large working area and a precisely controlled separation of about 1 to 20 nm has important applications in nano photonics, thermal management, power generation, chemical sensing, etc. However, an effective method of fabricating such nanogaps has not yet been established. In addition, it has been necessary to evaluate the dependence of physical characteristics of nanogaps on the separation, but it has been technically and economically difficult to develop such a system. In this study, we developed a MEMS device, which can produce nanogaps with a large area and parallel smooth surfaces by the (111) plane cleavage of a single crystal silicon beam and can change and measure the separation of nanogaps. Using this device, nanogap fabrication by cleavage and separation control were uninterruptedly carried out while maintaining the cleanliness of the gap surfaces in vacuum; a nanogap with a large smooth surface area of 30 μ m² was successfully controlled in the range of 14 nm–1.5 μ m. For a small separation of less than 100 nm, the control resolution was sufficiently high at 1 nm. This method is fully compatible with conventional fabrication technologies for not only MEMS but also other semiconductor devices and should contribute to the fabrication of devices that exhibit useful quantum effects with only minor modifications. 2022-0073
著作権等: © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
This is not the published version. Please cite only the published version. この論文は出版社版でありません。引用の際には出版社版をご確認ご利用ください。
URI: http://hdl.handle.net/2433/279084
DOI(出版社版): 10.1109/JMEMS.2022.3213999
出現コレクション:学術雑誌掲載論文等

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