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Title: | Impact of the oxidation temperature on the density of single-photon sources formed at SiO₂/SiC interface |
Authors: | Kaneko, Mitsuaki https://orcid.org/0000-0001-5629-0105 (unconfirmed) Takashima, Hideaki Shimazaki, Konosuke Takeuchi, Shigeki https://orcid.org/0000-0001-7731-003X (unconfirmed) Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
Author's alias: | 金子, 光顕 髙島, 秀聡 嶋崎, 幸之介 竹内, 繁樹 木本, 恒暢 |
Keywords: | Semiconductor devices Microfabrication Confocal microscopy Crystallographic defects Photoluminescence spectroscopy Optical metrology |
Issue Date: | Sep-2023 |
Publisher: | AIP Publishing |
Journal title: | APL Materials |
Volume: | 11 |
Issue: | 9 |
Thesis number: | 091121 |
Abstract: | The impact of oxidation temperature on the formation of single photon-emitting defects located at the silicon dioxide (SiO₂)/silicon carbide (SiC) interface was investigated. Thermal oxidation was performed in the temperature range between 900 and 1300 °C. After oxidation, two different cooling processes—cooling down in N₂ or O₂ ambient—were adopted. Single photon emission was confirmed with second-order correlation function measurements. For the samples cooled in an N₂ ambient, the density of interface single photon sources (SPSs) increased with decreasing oxidation temperature with a density that could be controlled over the 10⁵ to 10⁸ cm⁻² range. For the O₂ cooled samples, on the other hand, many interface SPSs were formed irrespective of the oxidation temperature. This is attributed to the low-temperature oxidation during the cooling process after oxidation. |
Rights: | © 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. |
URI: | http://hdl.handle.net/2433/286493 |
DOI(Published Version): | 10.1063/5.0162610 |
Appears in Collections: | Journal Articles |
This item is licensed under a Creative Commons License