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このアイテムのファイル:
| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 5.0162610.pdf | 5.85 MB | Adobe PDF | 見る/開く |
| タイトル: | Impact of the oxidation temperature on the density of single-photon sources formed at SiO₂/SiC interface |
| 著者: | Kaneko, Mitsuaki    https://orcid.org/0000-0001-5629-0105 (unconfirmed)Takashima, Hideaki Shimazaki, Konosuke Takeuchi, Shigeki https://orcid.org/0000-0001-7731-003X (unconfirmed)Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| 著者名の別形: | 金子, 光顕 髙島, 秀聡 嶋崎, 幸之介 竹内, 繁樹 木本, 恒暢 |
| キーワード: | Semiconductor devices Microfabrication Confocal microscopy Crystallographic defects Photoluminescence spectroscopy Optical metrology |
| 発行日: | Sep-2023 |
| 出版者: | AIP Publishing |
| 誌名: | APL Materials |
| 巻: | 11 |
| 号: | 9 |
| 論文番号: | 091121 |
| 抄録: | The impact of oxidation temperature on the formation of single photon-emitting defects located at the silicon dioxide (SiO₂)/silicon carbide (SiC) interface was investigated. Thermal oxidation was performed in the temperature range between 900 and 1300 °C. After oxidation, two different cooling processes—cooling down in N₂ or O₂ ambient—were adopted. Single photon emission was confirmed with second-order correlation function measurements. For the samples cooled in an N₂ ambient, the density of interface single photon sources (SPSs) increased with decreasing oxidation temperature with a density that could be controlled over the 10⁵ to 10⁸ cm⁻² range. For the O₂ cooled samples, on the other hand, many interface SPSs were formed irrespective of the oxidation temperature. This is attributed to the low-temperature oxidation during the cooling process after oxidation. |
| 著作権等: | © 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. |
| URI: | http://hdl.handle.net/2433/286493 |
| DOI(出版社版): | 10.1063/5.0162610 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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