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タイトル: Prospects of mist CVD for fabrication of β-Ga₂O₃ MESFETs on β-Ga₂O₃ (010) substrates
著者: Takane, Hitoshi
Ando, Yuji
Takahashi, Hidemasa
Makisako, Ryutaro
Ikeda, Hikaru
Ueda, Tetsuzo
Suda, Jun
Tanaka, Katsuhisa  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-1409-2802 (unconfirmed)
Fujita, Shizuo
Sugaya, Hidetaka
著者名の別形: 高根, 倫史
池田, 光
田中, 勝久
藤田, 静雄
発行日: Aug-2023
出版者: IOP Publishing
The Japan Society of Applied Physics
誌名: Applied Physics Express
巻: 16
号: 8
論文番号: 081004
抄録: Mist CVD was applied to grow the β-Ga₂O₃ channel layer of a MESFET on a semi-insulating β-Ga₂O₃ (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm² V⁻¹ s⁻¹ and 6.2 × 10¹⁷ cm⁻³, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm⁻¹. The maximum transconductance was 46 mS mm⁻¹ and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future.
著作権等: © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
URI: http://hdl.handle.net/2433/286748
DOI(出版社版): 10.35848/1882-0786/acefa5
出現コレクション:学術雑誌掲載論文等

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