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タイトル: | Prospects of mist CVD for fabrication of β-Ga₂O₃ MESFETs on β-Ga₂O₃ (010) substrates |
著者: | Takane, Hitoshi Ando, Yuji Takahashi, Hidemasa Makisako, Ryutaro Ikeda, Hikaru Ueda, Tetsuzo Suda, Jun Tanaka, Katsuhisa ![]() ![]() ![]() Fujita, Shizuo Sugaya, Hidetaka |
著者名の別形: | 高根, 倫史 池田, 光 田中, 勝久 藤田, 静雄 |
発行日: | Aug-2023 |
出版者: | IOP Publishing The Japan Society of Applied Physics |
誌名: | Applied Physics Express |
巻: | 16 |
号: | 8 |
論文番号: | 081004 |
抄録: | Mist CVD was applied to grow the β-Ga₂O₃ channel layer of a MESFET on a semi-insulating β-Ga₂O₃ (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm² V⁻¹ s⁻¹ and 6.2 × 10¹⁷ cm⁻³, respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of −9 V, and the maximum drain current was 240 mA mm⁻¹. The maximum transconductance was 46 mS mm⁻¹ and the on-resistance was 30 Ω mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future. |
著作権等: | © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
URI: | http://hdl.handle.net/2433/286748 |
DOI(出版社版): | 10.35848/1882-0786/acefa5 |
出現コレクション: | 学術雑誌掲載論文等 |

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