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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1882-0786_adb539.pdf | 1.09 MB | Adobe PDF | 見る/開く |
| タイトル: | Doping-dependent fixed charges in SiC/SiO₂ structure |
| 著者: | Mikami, Kyota Kaneko, Mitsuaki    https://orcid.org/0000-0001-5629-0105 (unconfirmed)Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090 (unconfirmed) |
| 著者名の別形: | 三上, 杏太 金子, 光顕 木本, 恒暢 |
| 発行日: | Mar-2025 |
| 出版者: | IOP Publishing The Japan Society of Applied Physics |
| 誌名: | Applied Physics Express |
| 巻: | 18 |
| 号: | 3 |
| 論文番号: | 034002 |
| 抄録: | Doping-dependent fixed charges were found in SiC/SiO₂ structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) devices and negative fixed charges increase for the n-body (p-channel) devices, both of which retard the increase of threshold voltage in MOSFETs with increasing the body doping. |
| 著作権等: | © 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| URI: | http://hdl.handle.net/2433/293013 |
| DOI(出版社版): | 10.35848/1882-0786/adb539 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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