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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| adc8f9.pdf | 1.75 MB | Adobe PDF | 見る/開く |
| タイトル: | Correlation between structural properties and electrochemical proton insertion in (001) VO₂ epitaxial films |
| 著者: | Fuji, Sota Isoda, Yosuke Lingling, Xie Haruta, Mitsutaka    https://orcid.org/0000-0002-2237-7242 (unconfirmed)Majima, Takuya https://orcid.org/0000-0003-2804-1915 (unconfirmed)Shimakawa, Yuichi https://orcid.org/0000-0003-1019-2512 (unconfirmed)Kan, Daisuke https://orcid.org/0000-0002-7505-0059 (unconfirmed) |
| 発行日: | Apr-2025 |
| 出版者: | IOP Publishing |
| 誌名: | Applied Physics Express |
| 巻: | 18 |
| 号: | 4 |
| 抄録: | We epitaxially grew rutile-structured VO₂ films with various out-of-plane lattice constants on (001) TiO₂ substrates by pulsed laser deposition and investigated their protonation by electrochemically injecting protons to the films in transistor structures with gate layers of proton conducting Nafion membranes. We found that VO₂ films with out-of-plane lattice expansion are less protonated. On the basis of the experimental results, we discuss the correlation between the out-of-plane lattice expansion and protonation of (001) VO₂ epitaxial films and highlight that reducing lattice defects is key to promoting the protonation of VO₂ films. |
| 著作権等: | Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
| URI: | http://hdl.handle.net/2433/293475 |
| DOI(出版社版): | 10.35848/1882-0786/adc8f9 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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