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Title: | Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition |
Authors: | Chen, Y Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Takeuchi, Y Matsunami, H |
Keywords: | characterization mesa structures chemical vapor deposition process selective epitaxy semiconducting silicon compounds |
Issue Date: | 2003 |
Publisher: | ELSEVIER SCIENCE BV |
Journal title: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 254 |
Issue: | 1-2 |
Start page: | 115 |
End page: | 122 |
URI: | http://hdl.handle.net/2433/3296 |
DOI(Published Version): | 10.1016/S0022-0248(03)01166-7 |
Link: | Web of Science |
Appears in Collections: | Graduate School of Engineering Literature Database |
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