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Title: Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition
Authors: Chen, Y
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Takeuchi, Y
Matsunami, H
Keywords: characterization
mesa structures
chemical vapor deposition process
selective epitaxy
semiconducting silicon compounds
Issue Date: 2003
Publisher: ELSEVIER SCIENCE BV
Journal title: JOURNAL OF CRYSTAL GROWTH
Volume: 254
Issue: 1-2
Start page: 115
End page: 122
URI: http://hdl.handle.net/2433/3296
DOI(Published Version): 10.1016/S0022-0248(03)01166-7
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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