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Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Y | en |
dc.contributor.author | Kimoto, T | en |
dc.contributor.author | Takeuchi, Y | en |
dc.contributor.author | Matsunami, H | en |
dc.date.accessioned | 2007-03-28T04:28:00Z | - |
dc.date.available | 2007-03-28T04:28:00Z | - |
dc.date.issued | 2003 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.uri | http://hdl.handle.net/2433/3296 | - |
dc.language.iso | eng | - |
dc.publisher | ELSEVIER SCIENCE BV | en |
dc.subject | characterization | en |
dc.subject | mesa structures | en |
dc.subject | chemical vapor deposition process | en |
dc.subject | selective epitaxy | en |
dc.subject | semiconducting silicon compounds | en |
dc.title | Homoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor deposition | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.jtitle | JOURNAL OF CRYSTAL GROWTH | en |
dc.identifier.volume | 254 | - |
dc.identifier.issue | 1-2 | - |
dc.identifier.spage | 115 | - |
dc.identifier.epage | 122 | - |
dc.relation.doi | 10.1016/S0022-0248(03)01166-7 | - |
dc.textversion | none | - |
dcterms.accessRights | metadata only access | - |
Appears in Collections: | Graduate School of Engineering Literature Database |
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