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dc.contributor.authorChen, Yen
dc.contributor.authorKimoto, Ten
dc.contributor.authorTakeuchi, Yen
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:28:00Z-
dc.date.available2007-03-28T04:28:00Z-
dc.date.issued2003-
dc.identifier.issn0022-0248-
dc.identifier.urihttp://hdl.handle.net/2433/3296-
dc.language.isoeng-
dc.publisherELSEVIER SCIENCE BVen
dc.subjectcharacterizationen
dc.subjectmesa structuresen
dc.subjectchemical vapor deposition processen
dc.subjectselective epitaxyen
dc.subjectsemiconducting silicon compoundsen
dc.titleHomoepitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates by chemical vapor depositionen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJOURNAL OF CRYSTAL GROWTHen
dc.identifier.volume254-
dc.identifier.issue1-2-
dc.identifier.spage115-
dc.identifier.epage122-
dc.relation.doi10.1016/S0022-0248(03)01166-7-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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