Downloads: 0
Files in This Item:
There are no files associated with this item.
Title: | Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition |
Authors: | Danno, K Hashimoto, K Saitoh, H Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Matsunami, H |
Keywords: | SiC epitaxial growth high purity deep level carrier lifetime |
Issue Date: | 2004 |
Publisher: | INST PURE APPLIED PHYSICS |
Journal title: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS |
Volume: | 43 |
Issue: | 7B |
Start page: | L969 |
End page: | L971 |
URI: | http://hdl.handle.net/2433/3337 |
DOI(Published Version): | 10.1143/JJAP.43.L969 |
Link: | Web of Science |
Appears in Collections: | Graduate School of Engineering Literature Database |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.