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Title: Low-concentration deep traps in 4H-SiC grown with high growth rate by chemical vapor deposition
Authors: Danno, K
Hashimoto, K
Saitoh, H
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Keywords: SiC
epitaxial growth
high purity
deep level
carrier lifetime
Issue Date: 2004
Publisher: INST PURE APPLIED PHYSICS
Journal title: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 43
Issue: 7B
Start page: L969
End page: L971
URI: http://hdl.handle.net/2433/3337
DOI(Published Version): 10.1143/JJAP.43.L969
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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