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Title: Epitaxial growth of 4H-SiC{0001} and reduction of deep levels
Authors: Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Wada, K
Danno, K
Keywords: silicon carbide (SiC)
chemical vapor deposition
surface polarity
deep level
impurity doping
Issue Date: 2006
Publisher: ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD
Journal title: SUPERLATTICES AND MICROSTRUCTURES
Volume: 40
Issue: 4-6
Start page: 225
End page: 232
URI: http://hdl.handle.net/2433/35963
DOI(Published Version): 10.1016/j.spmi.2006.06.021
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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