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Title: | Epitaxial growth of 4H-SiC{0001} and reduction of deep levels |
Authors: | Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Wada, K Danno, K |
Keywords: | silicon carbide (SiC) chemical vapor deposition surface polarity deep level impurity doping |
Issue Date: | 2006 |
Publisher: | ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD |
Journal title: | SUPERLATTICES AND MICROSTRUCTURES |
Volume: | 40 |
Issue: | 4-6 |
Start page: | 225 |
End page: | 232 |
URI: | http://hdl.handle.net/2433/35963 |
DOI(Published Version): | 10.1016/j.spmi.2006.06.021 |
Link: | Web of Science |
Appears in Collections: | Graduate School of Engineering Literature Database |
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