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Title: | Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers |
Authors: | Hatayama, T Yoneda, T Nakata, T Watanabe, M Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Matsunami, H |
Keywords: | SiC Schottky rectifier edge termination guard ring vanadium ion implantation |
Issue Date: | 2000 |
Publisher: | INST PURE APPLIED PHYSICS |
Journal title: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 39 |
Issue: | 12A |
Start page: | L1216 |
End page: | L1218 |
URI: | http://hdl.handle.net/2433/3818 |
DOI(Published Version): | 10.1143/JJAP.39.L1216 |
Link: | Web of Science |
Appears in Collections: | Graduate School of Engineering Literature Database |
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