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Title: Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers
Authors: Hatayama, T
Yoneda, T
Nakata, T
Watanabe, M
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Keywords: SiC
Schottky rectifier
edge termination
guard ring
vanadium
ion implantation
Issue Date: 2000
Publisher: INST PURE APPLIED PHYSICS
Journal title: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 39
Issue: 12A
Start page: L1216
End page: L1218
URI: http://hdl.handle.net/2433/3818
DOI(Published Version): 10.1143/JJAP.39.L1216
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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