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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/3818
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dc.contributor.authorHatayama, Ten
dc.contributor.authorYoneda, Ten
dc.contributor.authorNakata, Ten
dc.contributor.authorWatanabe, Men
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:14:55Z-
dc.date.available2007-03-28T04:14:55Z-
dc.date.issued2000-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/3818-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectSiCen
dc.subjectSchottky rectifieren
dc.subjectedge terminationen
dc.subjectguard ringen
dc.subjectvanadiumen
dc.subjection implantationen
dc.titleVanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiersen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen
dc.identifier.volume39-
dc.identifier.issue12A-
dc.identifier.spageL1216-
dc.identifier.epageL1218-
dc.relation.doi10.1143/JJAP.39.L1216-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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