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Title: Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
Authors: Fujihira, K
Tamura, S
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, H
Issue Date: Jan-2002
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Journal title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 49
Issue: 1
Start page: 150
End page: 154
Rights: (c)2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
URI: http://hdl.handle.net/2433/39984
DOI(Published Version): 10.1109/16.974762
Appears in Collections:Journal Articles

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