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Title: Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001)
Authors: Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Kosugi, H
Suda, J  KAKEN_id
Kanzaki, Y
Matsunami, H
Issue Date: Jan-2005
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Journal title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 1
Start page: 112
End page: 117
Rights: (c)2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
URI: http://hdl.handle.net/2433/39986
DOI(Published Version): 10.1109/TED.2004.841358
Appears in Collections:Journal Articles

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