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Title: | Design and Fabrication of RESURF MOSFETs on 4H-SiC(0001), (1120), and 6H-SiC(0001) |
Authors: | Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Kosugi, H Suda, J Kanzaki, Y Matsunami, H |
Issue Date: | Jan-2005 |
Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
Journal title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 52 |
Issue: | 1 |
Start page: | 112 |
End page: | 117 |
Rights: | (c)2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
URI: | http://hdl.handle.net/2433/39986 |
DOI(Published Version): | 10.1109/TED.2004.841358 |
Appears in Collections: | Journal Articles |
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