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Title: | Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition |
Authors: | Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Hirao, T Nakazawa, S Shiomi, H Matsunami, H |
Keywords: | chemical vapor deposition vapor phase epitaxy semiconducting silicon compounds doping |
Issue Date: | 2003 |
Publisher: | ELSEVIER SCIENCE BV |
Journal title: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 249 |
Issue: | 1-2 |
Start page: | 208 |
End page: | 215 |
URI: | http://hdl.handle.net/2433/4860 |
DOI(Published Version): | 10.1016/S0022-0248(02)02098-5 |
Link: | Web of Science |
Appears in Collections: | Graduate School of Engineering Literature Database |
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