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Title: Homoepitaxial growth of 4H-SiC(0 3 (3)over-bar-8) and nitrogen doping by chemical vapor deposition
Authors: Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Hirao, T
Nakazawa, S
Shiomi, H
Matsunami, H
Keywords: chemical vapor deposition
vapor phase epitaxy
semiconducting silicon compounds
doping
Issue Date: 2003
Publisher: ELSEVIER SCIENCE BV
Journal title: JOURNAL OF CRYSTAL GROWTH
Volume: 249
Issue: 1-2
Start page: 208
End page: 215
URI: http://hdl.handle.net/2433/4860
DOI(Published Version): 10.1016/S0022-0248(02)02098-5
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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