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dc.contributor.authorMiura, Men
dc.contributor.authorNakamura, Sen
dc.contributor.authorSuda, Jen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:19:10Z-
dc.date.available2007-03-28T04:19:10Z-
dc.date.issued2003-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/2433/5699-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.subjectpower deviceen
dc.subjectsilicon carbide (SiC)en
dc.subjectsuper junctionen
dc.titleFabrication of SiC lateral super junction diodes with multiple stacking p- and n-layersen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE ELECTRON DEVICE LETTERSen
dc.identifier.volume24-
dc.identifier.issue5-
dc.identifier.spage321-
dc.identifier.epage323-
dc.relation.doi10.1109/LED.2003.812561-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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