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| Title: | Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation |
| Authors: | Negoro, Y Miyamoto, N Kimoto, T    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Matsunami, H |
| Keywords: | avalanche breakdown ion implantation p-n diode SiC silicon carbide |
| Issue Date: | 2002 |
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Journal title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 49 |
| Issue: | 9 |
| Start page: | 1505 |
| End page: | 1510 |
| URI: | http://hdl.handle.net/2433/6284 |
| DOI(Published Version): | 10.1109/TED.2002.802637 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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