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Title: Experimental and theoretical investigations on short-channel effects in 4H-SiC MOSFETs
Authors: Noborio, M
Kanzaki, Y
Suda, J
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Keywords: device simulation
MOSFET
short-channel effect (SCE)
silicon carbide (SiC)
Issue Date: 2005
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Journal title: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 9
Start page: 1954
End page: 1962
URI: http://hdl.handle.net/2433/6375
DOI(Published Version): 10.1109/TED.2005.854269
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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