Access count of this item: 253

Files in This Item:
File Description SizeFormat 
v4-p30.pdf32.85 kBAdobe PDFView/Open
Title: Controlled Graft Polymerization on Silicon Substrate by the Combined Use of the Langmuir-Blodgett and Atom Transfer Radical Polymerization Techniques (ORGANIC MATERIALS CHEMISTRY-Polymeric Materials)
Authors: Ejaz, Muhammad
Yamamoto, Shinpei
Ohno, Kohji
Tsujii, Yoshinobu
Fukuda, Takeshi
Miyamoto, Takeaki
Keywords: Surface modification
Controlled radical polymerization
Graft layer
Issue Date: Mar-1998
Publisher: Institute for Chemical Research, Kyoto University
Journal title: ICR annual report
Volume: 4
Start page: 30
End page: 31
Abstract: The atom transfer radical polymerization technique using the copper/ligand complexes was applied to the graft polymerization of methyl methacrylate on the Si wafer on which the monolayer of the initiator, 2-(4-chlorosulfonylphenyl) ethyl trimethoxysilane, was immobilized by the Langmuir- Blodgett technique. Atomic force microscopic and ellipsometric studies revealed that the polymerization with an additional initiator afforded a homogeneous graft layer, the thickness of which increased proportionally to the number-average molecular weight of the narrow-polydispersity homopolymers produced in the solution. This suggests that the graft polymerization is successfully controlled by the Cu/ligand complexes in the same way as the solution polymerization.
Appears in Collections:Vol.4 (1997)

Show full item record

Export to RefWorks

Export Format: 

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.