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Title: | Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing |
Authors: | Negoro, Yuki Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090 (unconfirmed) Matsunami, Hiroyuki Pensl, Gerhard |
Keywords: | silicon carbide SiC implantation annealing diffusion kick out |
Issue Date: | 2007 |
Publisher: | INST PURE APPLIED PHYSICS |
Journal title: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 46 |
Issue: | 8A |
Start page: | 5053 |
End page: | 5056 |
URI: | http://hdl.handle.net/2433/67210 |
DOI(Published Version): | 10.1143/JJAP.46.5053 |
Link: | Web of Science |
Appears in Collections: | Graduate School of Engineering Literature Database |
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