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Title: Abnormal out-diffusion of epitaxially doped boron in 4H-SiC caused by implantation and annealing
Authors: Negoro, Yuki
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Matsunami, Hiroyuki
Pensl, Gerhard
Keywords: silicon carbide
SiC
implantation
annealing
diffusion
kick out
Issue Date: 2007
Publisher: INST PURE APPLIED PHYSICS
Journal title: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 46
Issue: 8A
Start page: 5053
End page: 5056
URI: http://hdl.handle.net/2433/67210
DOI(Published Version): 10.1143/JJAP.46.5053
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

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