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Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tamura, S | en |
dc.contributor.author | Fujihira, K | en |
dc.contributor.author | Kimoto, T | en |
dc.contributor.author | Matsunami, H | en |
dc.date.accessioned | 2007-03-28T04:28:32Z | - |
dc.date.available | 2007-03-28T04:28:32Z | - |
dc.date.issued | 2001 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/2433/7714 | - |
dc.language.iso | eng | - |
dc.publisher | INST PURE APPLIED PHYSICS | en |
dc.subject | silicon carbide | en |
dc.subject | chemical vapor deposition | en |
dc.subject | photoluminescence | en |
dc.subject | pin diode | en |
dc.subject | power device | en |
dc.title | High-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodes | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.jtitle | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en |
dc.identifier.volume | 40 | - |
dc.identifier.issue | 4A | - |
dc.identifier.spage | L319 | - |
dc.identifier.epage | L322 | - |
dc.relation.doi | 10.1143/JJAP.40.L319 | - |
dc.textversion | none | - |
dcterms.accessRights | metadata only access | - |
Appears in Collections: | Graduate School of Engineering Literature Database |
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