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dc.contributor.authorTamura, Sen
dc.contributor.authorFujihira, Ken
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T04:28:32Z-
dc.date.available2007-03-28T04:28:32Z-
dc.date.issued2001-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/7714-
dc.language.isoeng-
dc.publisherINST PURE APPLIED PHYSICSen
dc.subjectsilicon carbideen
dc.subjectchemical vapor depositionen
dc.subjectphotoluminescenceen
dc.subjectpin diodeen
dc.subjectpower deviceen
dc.titleHigh-purity and thick 4H-and 6H-SiC(0001) epitaxial growth by cold-wall chemical vapor deposition and high-voltage pin diodesen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen
dc.identifier.volume40-
dc.identifier.issue4A-
dc.identifier.spageL319-
dc.identifier.epageL322-
dc.relation.doi10.1143/JJAP.40.L319-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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