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dc.contributor.authorNoborio, Masatoen
dc.contributor.authorSuda, Junen
dc.contributor.authorKimoto, Tsunenobuen
dc.date.accessioned2009-06-23T05:26:12Z-
dc.date.available2009-06-23T05:26:12Z-
dc.date.issued2008-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/2433/78612-
dc.language.isoeng-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen
dc.subjectchannel mobilityen
dc.subjectdeposited insulatoren
dc.subjectinterface trap densityen
dc.subjectmetal-insulator-semiconductor (MIS)en
dc.subjectMOSFETen
dc.subjectsilicon carbide (SiC)en
dc.subjectsilicon nitride (SiNx)en
dc.subjectsilicon oxynitride (SiOxNy)en
dc.title4H-SiC MIS capacitors and MISFETs with deposited SiNx/SiO2 stack-gate structuresen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEEE TRANSACTIONS ON ELECTRON DEVICESen
dc.identifier.volume55-
dc.identifier.issue8-
dc.identifier.spage2054-
dc.identifier.epage2060-
dc.relation.doi10.1109/TED.2008.926644-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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