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Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Funaki, Tsuyoshi | en |
dc.contributor.author | Kimoto, Tsunenobu | en |
dc.contributor.author | Hikihara, Takashi | en |
dc.date.accessioned | 2009-06-23T05:26:18Z | - |
dc.date.available | 2009-06-23T05:26:18Z | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 1349-2543 | - |
dc.identifier.uri | http://hdl.handle.net/2433/78618 | - |
dc.language.iso | eng | - |
dc.publisher | IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG | en |
dc.subject | temperature characteristics | en |
dc.subject | SiC | en |
dc.subject | Schottky barrier diode | en |
dc.subject | device structure | en |
dc.title | High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena | en |
dc.type | journal article | - |
dc.type.niitype | Journal Article | - |
dc.identifier.jtitle | IEICE ELECTRONICS EXPRESS | en |
dc.identifier.volume | 5 | - |
dc.identifier.issue | 6 | - |
dc.identifier.spage | 198 | - |
dc.identifier.epage | 203 | - |
dc.relation.doi | 10.1587/elex.5.198 | - |
dc.textversion | none | - |
dcterms.accessRights | metadata only access | - |
Appears in Collections: | Graduate School of Engineering Literature Database |
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