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dc.contributor.authorFunaki, Tsuyoshien
dc.contributor.authorKimoto, Tsunenobuen
dc.contributor.authorHikihara, Takashien
dc.date.accessioned2009-06-23T05:26:18Z-
dc.date.available2009-06-23T05:26:18Z-
dc.date.issued2008-
dc.identifier.issn1349-2543-
dc.identifier.urihttp://hdl.handle.net/2433/78618-
dc.language.isoeng-
dc.publisherIEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENGen
dc.subjecttemperature characteristicsen
dc.subjectSiCen
dc.subjectSchottky barrier diodeen
dc.subjectdevice structureen
dc.titleHigh-temperature characteristics of SiC Schottky barrier diodes related to physical phenomenaen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleIEICE ELECTRONICS EXPRESSen
dc.identifier.volume5-
dc.identifier.issue6-
dc.identifier.spage198-
dc.identifier.epage203-
dc.relation.doi10.1587/elex.5.198-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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