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| タイトル: | Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra |
| 著者: | Kaneta, A Funato, M    https://orcid.org/0000-0002-5455-3757 (unconfirmed)Kawakami, Y https://orcid.org/0000-0003-3752-1507 (unconfirmed) |
| 発行日: | Sep-2008 |
| 出版者: | American Physical Society |
| 誌名: | PHYSICAL REVIEW B |
| 巻: | 78 |
| 号: | 12 |
| 論文番号: | 125317 |
| 抄録: | We investigated correlations between nanoscopic optical and structural properties in violet-emitting, blue-emitting, and green-emitting InxGa1−xN/GaN quantum wells (QWs) by means of scanning near-field optical microscopy (SNOM) and atomic force microscopy. Only in the blue-emitting QW, threading dislocations were not major nonradiative recombination centers (NRCs). SNOM data indicated that NRCs in the blue-emitting QW are surrounded by energy levels higher than those for radiative recombination. Such potential distributions realize “antilocalization” of carriers to NRCs, which is the cause of high emission quantum efficiencies in blue emitters. |
| 著作権等: | © 2008 The American Physical Society |
| URI: | http://hdl.handle.net/2433/84619 |
| DOI(出版社版): | 10.1103/PhysRevB.78.125317 |
| 関連リンク: | http://link.aps.org/doi/10.1103/PhysRevB.78.125317 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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