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dc.contributor.authorYano, Hen
dc.contributor.authorHirao, Ten
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:48:55Z-
dc.date.available2007-03-28T03:48:55Z-
dc.date.issued2000-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/2433/8473-
dc.language.isoeng-
dc.publisherJAPAN J APPLIED PHYSICSen
dc.subjectMOSFETen
dc.subject(1120) faceen
dc.subject4H-SiCen
dc.subject6H-SICen
dc.subject15R-SiCen
dc.subjectinversion channel mobilityen
dc.subjectthreshold voltageen
dc.subjectanisotropyen
dc.subjectnear-interfacial oxide trapsen
dc.titleHigh channel mobility in inversion layer of SiC MOSFETs for power switching transistorsen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen
dc.identifier.volume39-
dc.identifier.issue4B-
dc.identifier.spage2008-
dc.identifier.epage2011-
dc.relation.doi10.1143/JJAP.39.2008-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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