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| Title: | High channel mobility in inversion layer of SiC MOSFETs for power switching transistors |
| Authors: | Yano, H Hirao, T Kimoto, T    https://orcid.org/0000-0002-6649-2090 (unconfirmed)Matsunami, H |
| Keywords: | MOSFET (1120) face 4H-SiC 6H-SIC 15R-SiC inversion channel mobility threshold voltage anisotropy near-interfacial oxide traps |
| Issue Date: | 2000 |
| Publisher: | JAPAN J APPLIED PHYSICS |
| Journal title: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
| Volume: | 39 |
| Issue: | 4B |
| Start page: | 2008 |
| End page: | 2011 |
| URI: | http://hdl.handle.net/2433/8473 |
| DOI(Published Version): | 10.1143/JJAP.39.2008 |
| Link: | Web of Science |
| Appears in Collections: | Graduate School of Engineering Literature Database |
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