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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/8474
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dc.contributor.authorYano, Hen
dc.contributor.authorHirao, Ten
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.contributor.authorShiomi, Hen
dc.date.accessioned2007-03-28T03:54:34Z-
dc.date.available2007-03-28T03:54:34Z-
dc.date.issued2002-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/2433/8474-
dc.language.isoeng-
dc.publisherAMER INST PHYSICSen
dc.titleInterface properties in metal-oxide-semiconductor structures on n-type 4H-SiC(03(3)over-bar8)en
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleAPPLIED PHYSICS LETTERSen
dc.identifier.volume81-
dc.identifier.issue25-
dc.identifier.spage4772-
dc.identifier.epage4774-
dc.relation.doi10.1063/1.1529313-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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