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ファイル | 記述 | サイズ | フォーマット | |
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elex.5.597.pdf | 357.61 kB | Adobe PDF | 見る/開く | |
elex.5.697.pdf | Errata [IEICE Electron. Express : Vol. 5 (2008) No. 17 pp.697-697] | 659.63 kB | Adobe PDF | 見る/開く |
タイトル: | A study on electro thermal response of SiC power module during high temperature operation |
著者: | Funaki, Tsuyoshi ![]() ![]() Nishio, Akira Kimoto, Tsunenobu ![]() ![]() ![]() Hikihara, Takashi ![]() ![]() ![]() |
キーワード: | temperature characteristics SiC power module thermal distribution thermal conduction |
発行日: | 25-Aug-2008 |
出版者: | IEICE - Institute of Electronics, Information and Communication Engineers |
引用: | Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto and Takashi Hikihara, “A study on electro thermal response of SiC power module during high temperature operation”, IEICE Electron. Express, Vol. 5, No. 16, pp.597-602, (2008) . |
誌名: | IEICE Electronics Express |
巻: | 5 |
号: | 16 |
開始ページ: | 597 |
終了ページ: | 602 |
抄録: | This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro thermal analysis. The results of numerical analysis demonstrate high temperature operation of SiC device in the power module, which assumes less heat dissipation by simplified cooling system. The experimental results validate the numerical analysis results of the modeled SiC power module. |
記述: | [Correction] "A study on electro thermal response of SiC power module during high temperature operation: errata", IEICE Electron. Express, Vol. 5, No. 17, pp.697-697, (2008) . |
著作権等: | copyright©2008 IEICE |
URI: | http://hdl.handle.net/2433/85158 |
DOI(出版社版): | 10.1587/elex.5.597 |
出現コレクション: | 学術雑誌掲載論文等 |

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