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elex.5.697.pdfErrata [IEICE Electron. Express : Vol. 5 (2008) No. 17 pp.697-697]659.63 kBAdobe PDF見る/開く
タイトル: A study on electro thermal response of SiC power module during high temperature operation
著者: Funaki, Tsuyoshi  KAKEN_id  orcid https://orcid.org/0000-0001-8776-5118 (unconfirmed)
Nishio, Akira
Kimoto, Tsunenobu  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Hikihara, Takashi  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-0029-4358 (unconfirmed)
キーワード: temperature characteristics
SiC
power module
thermal distribution
thermal conduction
発行日: 25-Aug-2008
出版者: IEICE - Institute of Electronics, Information and Communication Engineers
引用: Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto and Takashi Hikihara, “A study on electro thermal response of SiC power module during high temperature operation”, IEICE Electron. Express, Vol. 5, No. 16, pp.597-602, (2008) .
誌名: IEICE Electronics Express
巻: 5
号: 16
開始ページ: 597
終了ページ: 602
抄録: This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro thermal analysis. The results of numerical analysis demonstrate high temperature operation of SiC device in the power module, which assumes less heat dissipation by simplified cooling system. The experimental results validate the numerical analysis results of the modeled SiC power module.
記述: [Correction] "A study on electro thermal response of SiC power module during high temperature operation: errata", IEICE Electron. Express, Vol. 5, No. 17, pp.697-697, (2008) .
著作権等: copyright©2008 IEICE
URI: http://hdl.handle.net/2433/85158
DOI(出版社版): 10.1587/elex.5.597
出現コレクション:学術雑誌掲載論文等

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