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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| elex.5.198.pdf | 487.61 kB | Adobe PDF | 見る/開く |
| タイトル: | High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena |
| 著者: | Funaki, Tsuyoshi   https://orcid.org/0000-0001-8776-5118 (unconfirmed)Kimoto, Tsunenobu  https://orcid.org/0000-0002-6649-2090 (unconfirmed)Hikihara, Takashi https://orcid.org/0000-0002-0029-4358 (unconfirmed) |
| キーワード: | temperature characteristics SiC Schottky barrier diode device structure |
| 発行日: | 25-Mar-2008 |
| 出版者: | IEICE - Institute of Electronics, Information and Communication Engineers |
| 引用: | Tsuyoshi Funaki, Tsunenobu Kimoto and Takashi Hikihara, “High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena”, IEICE Electron. Express, Vol. 5, No. 6, pp.198-203, (2008) . |
| 誌名: | IEICE Electronics Express |
| 巻: | 5 |
| 号: | 6 |
| 開始ページ: | 198 |
| 終了ページ: | 203 |
| 抄録: | This paper experimentally studies the temperature dependencies of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of SiC power devices, and discusses the relationships between physical phenomena and the measured characteristics in SiC. Two SiC Schottky barrier diodes (SBD) with different specifications were studied for temperatures ranging from 25 to 450°C. Their I-V characteristics show that SBDs indeed function as rectifiers at extremely high temperatures, but forward conduction and reverse blocking performance significantly deteriorates when the temperature exceeds 200°C. C-V characteristics show diffusion potential reduction with temperature, and p-n junction characteristics were found for the junction barrier Schottky structure. |
| 著作権等: | copyright©2008 IEICE |
| URI: | http://hdl.handle.net/2433/85159 |
| DOI(出版社版): | 10.1587/elex.5.198 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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