1. Kyoto University Research Information Repository
  2. 090_Graduate School of Engineering
  3. Graduate School of Engineering Literature Database
Downloads: 0

    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/8731
Files in This Item:
There are no files associated with this item.
Title: Formation of epitaxial mesa structures on 4H-SiC (0001) and (11(2)over-bar-0) substrates
Authors: Chen, Y
Kimoto, T  kyouindb  KAKEN_id  orcid https://orcid.org/0000-0002-6649-2090 (unconfirmed)
Takeuchi, Y
Matsunami, H
Keywords: 3C-SiC inclusions
anisotropy
homoepitaxy
lateral growth
mesa structures
Issue Date: 2002
Publisher: TRANS TECH PUBLICATIONS LTD
Journal title: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS
Volume: 389-3
Start page: 255
End page: 258
URI: http://hdl.handle.net/2433/8731
Link: Web of Science
Appears in Collections:Graduate School of Engineering Literature Database

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.