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ファイル | 記述 | サイズ | フォーマット | |
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PhysRevB.79.041301.pdf | 185.92 kB | Adobe PDF | 見る/開く |
タイトル: | Photoluminescence dynamics and reduced Auger recombination in Si1-xGex/Si superlattices under high-density photoexcitation |
著者: | Tayagaki, Takeshi Fukatsu, Susumu Kanemitsu, Yoshihiko https://orcid.org/0000-0002-0788-131X (unconfirmed) |
著者名の別形: | 金光, 義彦 |
キーワード: | Auger effect electron-hole recombination elemental semiconductors excitons Ge-Si alloys nanostructured materials photoexcitation photoluminescence semiconductor superlattices silicon stimulated emission |
発行日: | Jan-2009 |
出版者: | American Institute of Physics |
誌名: | Physical Review B |
巻: | 79 |
号: | 4 |
論文番号: | 041301(R) |
抄録: | Optical gain and stimulated emission processes in Si nanostructures are controlled by the dynamics of high-density carriers. Here, we report photoluminescence (PL) dynamics and multiexciton recombination in Si1−xGex/Si superlattices (SLs) under high-density excitation. Saturation of the PL intensity and rapid PL decay are observed as the excitation laser intensity is increased. These phenomena occur due to nonradiative Auger recombination of the electron-hole pairs. We find that the Auger process in Si1−xGex/Si SLs is less pronounced than that in the Si1−xGex/Si single quantum wells. Our results show that coupled nanostructures have an advantage in efficient light emission and the control of many-body carrier dynamics. |
著作権等: | c 2009 The American Physical Society |
URI: | http://hdl.handle.net/2433/87341 |
DOI(出版社版): | 10.1103/PhysRevB.79.041301 |
出現コレクション: | 学術雑誌掲載論文等 |
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