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    Please use this identifier to cite or link to this item: http://hdl.handle.net/2433/8734
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dc.contributor.authorDanno, Ken
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:39:24Z-
dc.date.available2007-03-28T03:39:24Z-
dc.date.issued2005-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8734-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subjectDLTSen
dc.subjectdeep levelen
dc.subjectmidgapen
dc.subjectintrinsic defecten
dc.subjectpn diodeen
dc.titleMidgap levels in As-grown 4H-SiC epilayers investigated by DLTSen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2004en
dc.identifier.volume483-
dc.identifier.spage355-
dc.identifier.epage358-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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