Access count of this item: 271

Files in This Item:
File Description SizeFormat 
PhysRevB.77.073201.pdf258.84 kBAdobe PDFView/Open
Title: Disorder-induced rapid localization of electron-hole plasmas in highly excited InxGa1-xN mixed crystals
Authors: Hirano, Daisuke
Tayagaki, Takeshi  KAKEN_id
Kanemitsu, Yoshihiko  kyouindb  KAKEN_id
Author's alias: 金光, 義彦
Keywords: excitons
gallium compounds
III-V semiconductors
indium compounds
photoluminescence
solid-state plasma
time resolved spectra
wide band gap semiconductors
Issue Date: Feb-2008
Publisher: American Physical Society
Journal title: Physical Review B
Volume: 77
Issue: 7
Thesis number: 073201
Abstract: In mixed semiconductor crystals, random potential fluctuations cause localized band-tail states below the band edge and control the optical spectrum and dynamics. We report the influence of these band-tail states on the dynamics of electron-hole plasmas in highly excited InxGa1−xN mixed crystals. Temporal changes in the luminescence spectrum of InxGa1−xN mixed crystals and their band-gap renormalization are completely different from those of GaN crystals. Our findings show that holes are rapidly localized at band-tail states and that electron plasmas in the extended states determine the luminescence properties and band-gap renormalization of InxGa1−xN mixed crystals.
Rights: c 2008 The American Physical Society
URI: http://hdl.handle.net/2433/87353
DOI(Published Version): 10.1103/PhysRevB.77.073201
Appears in Collections:Journal Articles

Show full item record

Export to RefWorks


Export Format: 


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.