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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.2187954.pdf | 309.04 kB | Adobe PDF | 見る/開く |
| タイトル: | Temperature dependence of exciton localization dynamics in InxGa1-xN epitaxial films |
| 著者: | Kanemitsu, Yoshihiko    https://orcid.org/0000-0002-0788-131X (unconfirmed)Tomita, Koichi Hirano, Daisuke Inouye, Hideyuki |
| 著者名の別形: | 金光, 義彦 |
| 発行日: | Jun-2006 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 88 |
| 号: | 12 |
| 論文番号: | 121113 |
| 抄録: | We have studied the temperature dependence of exciton localization dynamics in InxGa1–xN epitaxial films (x=0.09) by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. During 30 ps after 150 fs laser excitation, the PL dynamics is sensitive to the measurement temperature. In the temperature range of 6–50 K, the PL rise time decreases and the PL peak energy shifts to higher energy with an increase of temperature. At high temperatures above 80 K, the thermal quenching of the PL at shallow localized states occurs. The energy relaxation processes of excitons in localized states of InxGa1–xN films are discussed. |
| 著作権等: | c 2006 American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/87361 |
| DOI(出版社版): | 10.1063/1.2187954 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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