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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.2103407 .pdf | 409.89 kB | Adobe PDF | 見る/開く |
| タイトル: | Subpicosecond luminescence spectroscopy of exciton localization in InxGa1-xN films |
| 著者: | Kanemitsu, Yoshihiko    https://orcid.org/0000-0002-0788-131X (unconfirmed)Tomita, Koichi Inouye, Hideyuki |
| 著者名の別形: | 金光, 義彦 |
| 発行日: | Oct-2005 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 87 |
| 号: | 15 |
| 論文番号: | 151120 |
| 抄録: | We have studied the exciton localization dynamics in InxGa1–xN epitaxial films with different In compositions (x=0.02, 0.05, and 0.09) by means of optical Kerr-gate time-resolved photoluminescence (PL) spectral measurements. By changing excitation wavelength of 150 fs laser pulses, InxGa1–xN films are resonantly excited around their exciton energies at 6 K. Under the resonant excitation, the PL dynamics is sensitive to the In composition of the sample and the excitation laser intensity. In the low In composition samples, the formation time of radiative excitons at localized states is 5–10 ps. In the high In composition samples, the gradual redshift of the PL peak energy is observed within several tens of picoseconds. The radiative recombination processes of excitons are discussed. |
| 著作権等: | c 2005 American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/87363 |
| DOI(出版社版): | 10.1063/1.2103407 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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