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| ファイル | 記述 | サイズ | フォーマット | |
|---|---|---|---|---|
| 1.1650552.pdf | 55.05 kB | Adobe PDF | 見る/開く |
| タイトル: | Band-gap renormalization in highly excited GaN |
| 著者: | Nagai, Takehiko Inagaki, Takeshi J. Kanemitsu, Yoshihiko    https://orcid.org/0000-0002-0788-131X (unconfirmed) |
| 著者名の別形: | 金光, 義彦 |
| 発行日: | Feb-2004 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 84 |
| 号: | 8 |
| 論文番号: | 1284 |
| 抄録: | We have studied the band-gap renormalization in highly excited GaN thin films by means of photoluminescence (PL) spectral measurements from 6 to 300 K. The renormalized band-gap energy is determined from the low-energy edge of the broad PL band due to the high-density electron and hole (e–h) plasmas. The reduction of the band-gap energy depends on the density of e–h plasmas, but is independent of temperature. The renormalized band-gap energy is calculated using two theoretical models. Our results suggest that the e–h pair correlation plays an essential role in highly excited GaN. |
| 著作権等: | c 2004 American Institute of Physics. |
| URI: | http://hdl.handle.net/2433/87369 |
| DOI(出版社版): | 10.1063/1.1650552 |
| 出現コレクション: | 学術雑誌掲載論文等 |
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