Downloads: 0
Files in This Item:
There are no files associated with this item.
Title: | Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD |
Authors: | Fujihira, K Kimoto, T https://orcid.org/0000-0002-6649-2090 (unconfirmed) Matsunami, H |
Keywords: | deep level transient spectroscopy fast epitaxy morphology photoluminescence |
Issue Date: | 2002 |
Publisher: | TRANS TECH PUBLICATIONS LTD |
Journal title: | SILICON CARBIDE AND RELATED MATERIALS - 2002 |
Volume: | 433-4 |
Start page: | 161 |
End page: | 164 |
URI: | http://hdl.handle.net/2433/8740 |
Link: | Web of Science |
Appears in Collections: | Graduate School of Engineering Literature Database |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.