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dc.contributor.authorNakamura, SIen
dc.contributor.authorKumagai, Hen
dc.contributor.authorKimoto, Ten
dc.contributor.authorMatsunami, Hen
dc.date.accessioned2007-03-28T03:40:42Z-
dc.date.available2007-03-28T03:40:42Z-
dc.date.issued2002-
dc.identifier.issn0255-5476-
dc.identifier.urihttp://hdl.handle.net/2433/8832-
dc.language.isoeng-
dc.publisherTRANS TECH PUBLICATIONS LTDen
dc.subject(0338) planeen
dc.subject(1120) planeen
dc.subjectanisotropyen
dc.subjectbreakdown fielden
dc.titleBreakdown fields along various crystal orientations in 4H-, 6H- and 3C-SiCen
dc.typejournal article-
dc.type.niitypeJournal Article-
dc.identifier.jtitleSILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGSen
dc.identifier.volume389-3-
dc.identifier.spage651-
dc.identifier.epage654-
dc.textversionnone-
dcterms.accessRightsmetadata only access-
Appears in Collections:Graduate School of Engineering Literature Database

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